During the singulation process a high speed rotating dicing saw or high energy laser beam separates the chips. The silicon material within the “street” proximity is as much destroyed as the backside of the wafer after grinding. The quality of the side walls is a determining factor in the strength of the die. Downstream plasma treatment allows access to the side walls of the chips immediately after dicing. Pure, dry, chemical isotropic etching, can be applied to the back-side after singulation (DBG-Process) or after dicing from the front side. We call this process CSH (Chip Side Healing). Once the silicon is treated on all side walls of the chip as well as on the back side, the maximum physical die strength is achieved (“the perfect die”). Chip Side Healing can be applied in-situ with Passivation.
During the singulation process a high speed rotating dicing saw or high energy laser beam separates the chips. The silicon material within the “street” proximity is as much destroyed as the backside of the wafer after grinding. The quality of the side walls is a determining factor in the strength of the die. Downstream plasma treatment allows access to the side walls of the chips immediately after dicing. Pure, dry, chemical isotropic etching, can be applied to the back-side after singulation (DBG-Process) or after dicing from the front side. We call this process CSH (Chip Side Healing). Once the silicon is treated on all side walls of the chip as well as on the back side, the maximum physical die strength is achieved (“the perfect die”). Chip Side Healing can be applied in-situ with 
