Plasma photoresist ashing following etching and ion implantation is one of the most important and frequently performed steps in semiconductor fabrication. The number of lithography cycles can vary typically from 10 to 25. Each cycle requires a photoresist stripping process. Plasma photoresist stripping of the photo-mask is a dry, eco-friendly process called Plasma Ashing, and is fast replacing wet stripping / wet etching technologies. PVA TePla is the market leader for Plasma Ashing systems using either microwave or RF excitation. We offer both Single Wafer and Batch Ashers.
Microwave plasma is ideal for most resist removal in modern device fabrication, since it produces a very high concentration of chemically active species along with low ion bombardment energy, guaranteeing fast ash rate and a damage-free plasma cleaning. Microwave plasma systems are suitable for various substrate technologies like Si, III/V-compounds, quartz, ceramic, lithium niobate, copper interconnect devices etc. The inherently isotropic plasma etch characteristic is an advantage for sacrificial layer etch and SU-8 removal in MEMS fabrication.
Typical device markets served are:
This series of resist batch ashers ranges from manual to fully automated accommodating wafers from 2" to 8" (50 to 200 mm)
Fully automatic single wafer resist
stripping system for implant resist
and MEMS applications for wafers
up to 300 mm
Plasma system with large area planar
source technology for low temperature ashing of SU-8 and other sensitive organic layers. Used in MEMS fabrication and OLED/PLED development. Holds one 300 mm wafer or four 150 mm wafers
Laboratory or university microwave system ideal for resist ashing, wafer cleaning and decapsulation of electronic devices