The photoresist ashing IoN 100WB-40Q plasma system is designed for R&D and low volume production applications. The technology is based on the proven reactor designs developed over the course of 57 years. This photoresist ashing plasma system was originally designed and manufactured by International Plasma Corporation. Later the technology was aquired by Branson IPC, Dionex, followed by Gasonics, Metroline, TePla and finally PVA TePla. The photoresist ashing IoN 100WB-40Q is derived from the IoN 100-40Q, on a smaller chassis which has all the same plasma qualities as that of IoN 100-40Q, except the pump power connection. The IoN 100WB-40Q requires a facilities power outlet for powering the vacuum pump.
Material: Quartz chamber
Dimension: 304 mm D x 508 mm L (12”x20”)
Volume: 37 L (1.31 ft3)
Chamber Opening: 289.56 mm (11.4”)
Electrodes: Clam-shell
Number of MFCs: 1
Process Pressure: (0.16 to 2.66) mbar
(120 to 2000) mTorr Base Pressure: 0.07 mbar (50 mTorr)
Pumping time: 1 min (Pump dependent) Wafer Sizes: Up to 200 mm (8”)
Batch size (Boat): 25 wafers of diameter 200 mm (8”)
50 wafers of diameter 150 mm (6”)
Wafer Loading: Manual
Electricity: 208/240 VAC, 1f, 50/60 Hz, 3-wire, 4.8 kW
Process Gas Input Pressure: 2 bar (30 psi)
Purge Gas Input Pressure: 2 bar (30 psi)
Compressed Air Input Pressure: 6 bar (88 psi)
Frequency/power: 13.56 MHz/600 W
737 mm W x 1067 mm D x 1524 mm H (29”x42”x60”)
239 kg (527 lb) (varies with options)
Uptime: 95%
MTBF: >500 h
MTTR: <2 h
