Plasma photoresist ashing following etching and ion implantation is one of the most important and frequently performed steps in semiconductor fabrication. The number of lithography cycles can vary typically from 10 to 25. Each cycle requires a photoresist stripping process. Plasma photoresist stripping of the photo-mask is a dry, eco-friendly process called Plasma Ashing, and is fast replacing wet stripping / wet etching technologies. PVA TePla is the market leader for Plasma Ashing systems using either microwave or RF excitation. We offer both Single Wafer and Batch Ashers.
Microwave plasma is ideal for most resist removal in modern device fabrication, since it produces a very high concentration of chemically active species along with low ion bombardment energy, guaranteeing fast ash rate and a damage-free plasma cleaning. Microwave plasma systems are suitable for various substrate technologies like Si, III/V-compounds, quartz, ceramic, lithium niobate, copper interconnect devices etc. The inherently isotropic plasma etch characteristic is an advantage for sacrificial layer etch and SU-8 removal in MEMS fabrication.
Typical device markets served are:
