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    • PVA TePla America, LLC
    • 251 Corporate Terrace
      Corona, Ca 92879.

    Ion Wave 10 Gas Plasma System

    IoN Wave 10 Batch Plasma System

    Microwave generates higher density plasma (ions/radicles) and a lower induced bias voltage across the substrate compared to rf plasma. Because of this fact, the ashing rate of photoresist in microwave plasma is expected to be higher and the plasma damage lower. The IoN Wave 10 plasma system is designed for R&D and small scale production applications. PVA TePla is a proven and trusted resource globally for high-quality, reliable, cost-effective and easy to operate gas plasma systems. It offers some of the most advanced and innovative solutions for a wide variety of applications.

    Typical applications

    • Photoresist ashing and Descum
    • SU-8 removal at lower temperature
    • Etching of passivation layers
    • Device decapsulation
    • Surface cleaning
    • Surface activation

    Features Include:

    • Small foot print table top design
    • Plug and play self installation
    • Industrial computer with LCD touch panel and keyboard. Windows based operating system
    • Graphical User Interface (GUI) software complies with CFR Title 21 Part 11 and Semi E95-1101
    • Multi-level user access
    • Software
      • Recipe editor for fast and versatile step controls
      • Onboard diagnostic features and alarm logging
      • Remote process monitoring via Ethernet
      • Online web based simulation/training/support

    Technical Data

    Process Chamber

    • Material: Quartz chamber
    • Dimension: 248 mm D x 244 mm L (9.76” x9.60”)
    • Volume: 11.76 L (0.42 ft3)
    • Chamber opening: 241 mm at seal plate
    • Number of MFCs: 1
    • Process Pressure: (0.5 to 1.5) mbar
    • (375 to 1125) mTorr)
    • Base Pressure: 0.07 mbar (50 mTorr)
    • Pumping Time: 1 min (Pump dependent)
    • Wafer Sizes: Up to 200 mm (8”)
    • Batch size (Boat): 25 wafers of diameter 150 mm (6”)
    • Batch size (Plate): 1 wafer of diameter 200 mm (8”)
    • Wafer Loading: Manual

    Plasma Generator

    • Microwave frequency/power: 2.45
    • GHz/1000 W

    Options

    • Step-up transformer (115 VAC to 230 VAC)
    • Automated robotic loading/unloading
    • Ceramic chamber and chemical resistant seals
    • Secondary plasma
      • Faraday/Etch tunnel
    • Additional MFCs/up to additional five gasses
    • Endpoint Detection
      • Single wavelength
      • Spectrographic
    • Recirculation liquid chiller and Temperature controlled plate
    • Process pressure control
    • Light tower with R/Y/G/Buzzer
    • Barcode scanner; RGA; Printer
    • Gas (H2, N2, O2) generator package
    • Vacuum pumps (Rotary vane, dry)
    • SECS/GEM Interface

    Machine Dimension and Weight:

    • 737 mm W x 663 mm D x 711 mm H (29”x26.1”x28”)
    • 134 kg (295 lb) (Varies with options)

    Performance Data

    • Uptime: 95%
    • MTBF: >500 h
    • MTTR: <2 h

    Facilities Requirements

    • Electricity: 230 VAC, 1f, 50/60 Hz, 3 wire, 4.8 kW
    • Process Gas Input Pressure: 2 bar (30 psi)
    • Purge Gas Input Pressure: 2 bar (30 psi)
    • Compressed Air Input Pressure: 6 bar (88 psi)

    Safety Certification Standards

    • CE certified
    • EN 61010
    • EN 61326